Samsung has introduced the “Industry’s First” 24Gb (3GB) GDDR7 memory, offering exceptionally high speeds of up to 42.5 Gbps to power next-generation GPUs. Owing to many refinements and updates, Samsung asserts a 50% density improvement alongside a 30% boost in efficiency versus the previous generation. Validation of these 24Gb GDDR7 modules is ongoing with “major” GPU manufacturers and mass production is planned for early next year.

Last July, Samsung unveiled the world’s first GDDR7 memory, rated at a modest 32 Gbps and with capacities of 16Gb (2GB) per module. The new ICs net Samsung a 25% improvement in bandwidth against its already-announced GDDR7 modules, and a 2.36x improvement against its last-generation 18 Gbps GDDR6 offerings. In terms of manufacturing, Samsung’s 24Gb GDDR7 memory utilizes the company’s 5th generation 10nm node, resulting in a 50% density increase at the same package size.

To achieve these never-before-seen heights, Samsung has incorporated PAM3 signaling which makes use of 3 signals (-1, 0, +1) to transmit data. These new memory modules can easily hit 40 Gbps, though, under specific conditions, 42.5 Gbps is also possible, almost 80% faster than what GDDR6X delivers (24 Gbps).

With great power comes great responsibility and to address the concerns of efficiency, Samsung touts their new GDDR7 memory as 30% more efficient than last-generation thanks to technologies such as clock control management and a dual VDD design. Furthermore, the issue of current leakage is resolved by power gating; shutting down parts of the chip that aren’t in use.